? absolute maximum ratings ta = 25 c note *1 device mounted on a glass-epoxy board (see figure 1) *2 pulse test: ensure that the channel temperature does not exceed 150 c publication date: september 2012 ver. ced 4. gate(fet2) 8. drain(fet1) storage temperature range tstg -55 to c 2. gate(fet1) 6. drain(fet2) tch 150 c 3. source(fet2) 7. drain(fet1) w 1.3 channel temperature overall power dissipation (steady state) *1 pd 1 +150 a drain current (t=10s) *1 drain current (pulsed) *1,2 source current (pulsed) (body diode) *1,2 5 isp (bd) id 5 5.5 vds (eu rohs / ul-94 v-0 / msl:level 1 compliant) ? marking symbol: 7a FC8J33040L dual n-channel mosfet panasonic wmini8-f1 3 000 pcs / reel (standard) jeita sc-115 FC8J33040L embossed type (thermo-compression sealing): unit: mm 1. source(fet1) 5. drain(fet2) ? basic part number 2. gate(fet1) 6. drain(fet2) 3. source(fet2) 7. drain(fet1) y high-speed switching :qg = 2.8 nc y halogen-free / rohs compliant ? features y low drain-source on resistance:rss(on)typ. = 48 m (vgs = 4.5v) drain-source voltage for switching 4. gate(fet2) 8. drain(fet1) 1 20 v code D idp 20 parameter symbol vgs drain current (steady state) *1 power dissipation (t=10s) *1 gate-source voltage ? packaging dual nch mos 33v (individual) FC8J33040L fet1 fet2 pin name 1. source(fet1) 5. drain(fet2) rating unit 33 v 1 2 3 4 8 7 6 5 1 2 3 4 8 7 6 5 1 2 3 4 8 7 6 5 1 2 3 4 8 7 6 5 fet1 fet2 fr-4 (unit:mm) 25.4 x 25.4 x 0.8 (figure 1) glass-epoxy board
? electrical characteristics ta = 25 c 3 c fet1, fet2 static characteristics note *1 pulse test: ensure that the channel temperature does not exceed 150 c d y namic characteristics bod y diode characteristic note *1 pulse test: ensure that the channel temperature does not exceed 150 c ver. ced 0.8 1.2 v diode forward voltage *1 vsd is = 2.5 a, vgs = 0 v qgd 1.2 pf ns id = 2.5 a (see figure 2) vdd = 15 v, vgs = 0 to 4.5 v, id = 5 a nc 1.1 3 gate to drain charge 9 total gate charge qg 2.8 gate to source charge qgs fall time tf turn-off delay time td(off) vdd = 15 v, vgs = 10 to 0 v 15 turn-on delay time td(on) vdd = 15 v, vgs = 0 to 10 v 7 rise time tr id = 2.5 a (see figure 2) reverse transfer capacitance crss 35 output capacitance coss 40 ciss 220 vds = 10 v, vgs = 0 v, f = 1 mhz parameter gate-source threshold voltage 38 1 input capacitance drain-source on-state resistance *1 rds(on) m vth id = 2.5 a, vgs = 4.5 v 48 32 FC8J33040L 2 10 68 id = 2.5 a, vgs = 10 v a a id = 0.26 ma, vds = 10 v 1 v symbol 2.5 vgs = 16 v, vds = 0 v v typ. conditions min. unit drain-source breakdown voltage vdss id = 1 ma, vgs = 0 v 33 max. vds = 33 v, vgs = 0 v gate-source leakage current igss zero gate voltage drain current idss
id=2.5a ver. ced FC8J33040L 3 vdd = 15 v vout vin vin 0v 10v pw = 10 s d.c. Q 1 % d s g 50 10% 90% 90% 10% 90% 10% vin vout td(on) tr td(off) tf (figure 2) measuremet circuit for turn-on delay time/rise time/turn-off delay time/fall time
ver. ced capacitance - vds FC8J33040L dynamic input/output characteristics 4 id - vds id - vgs vds - vgs rds(on) - id 0 5 10 15 0246810 total gate charge qg (nc) gate-source voltage vgs (v) vdd=15v 0 1 2 3 4 0 0.1 0.2 0.3 drain-source voltage vds (v) drain current id (a) vgs=3.0v 4.0v 4.5v 10.0v 3.5v 0 0.5 1 1.5 2 2.5 012345 gate-source voltage vgs (v) drain current id (a) ta=85 c 25 c -30 c 0 0.2 0.4 0.6 0.8 1 0246810 gate-source voltage vgs (v) drain-source voltage vds (v) id=5.0a 2.5a 1.25a 1 10 100 1000 0.1 1 drain current id (a) drain-source on-state resistance rds(on) (m ) vgs=10.0v 4.5v 1 10 100 1000 0.1 1 10 100 drain-source voltage vds (v) capacitance c (pf) ciss coss crss
ver. ced rth - tsw FC8J33040L safe operating area 5 vth - ta rds(on) - ta pd - ta 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 drain-source voltage vds (v) drain current id (a) idp=20a operation in this area is limited by rds(on) ta=25 c, glass epoxy board (25.425.4t0.8mm) coated with copper foil, which has more than 300mm 2 . 0 1 2 3 -50 0 50 100 150 temperature ta ( c) gate- source threshold voltage vth (v) 0 20 40 60 80 -50 0 50 100 150 200 temperature ta ( c) drain-source on-state resistance rds(on) (m ) 4.5v vgs=10.0v 0 0.5 1 1.5 2 0 50 100 150 temperature ta ( c) total power dissipation pd (w) mounted on a glass-epoxy board (25.4 x 25.4 x 0.8 mm) 1 10 100 1000 0.1 1 10 100 1000 pulse width tsw (s) thermal resistance rth ( c/w) 100ms 1s dc 1ms 10ms
ver. ced 6 FC8J33040L unit: mm wmini8-f1 ? land pattern (reference) (unit: mm)
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